Author:
Padovani Andrea,Larcher Luca,Della Marca Vincenzo,Pavan Paolo,Park Hokyung,Bersuker Gennadi
Subject
General Physics and Astronomy
Reference24 articles.
1. Study of charge storage behavior in metal-alumina-silicon dioxide-silicon(MAOS) field effect transistor
2. Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications
3. P. Blomme, J. De Vos, A. Akheyar, L. Haspeslagh, J. Van Houdt, and K. De Meyer, in Proceedings of the 21st Nonvolatile Semiconductor Memory Workshop, Monterey, CA, 12–16 February 2006 (IEEE, New York, 2006), p–52.
4. High dielectric constant gate oxides for metal oxide Si transistors
5. Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes
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