Variability of structural and electronic properties of bulk and monolayer Si2Te3-Reference-Cited by-同舟云学术

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Variability of structural and electronic properties of bulk and monolayer Si2Te3

Published:2016-09-12 Issue:11 Volume:109 Page:113104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shen X.¹²,Puzyrev Y. S.¹,Combs C.¹,Pantelides S. T.¹³

Affiliation:

1. Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA

2. Department of Physics and Materials Science, University of Memphis, Memphis, Tennessee 38152, USA

3. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4962826

Reference35 articles.

1. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

2. Electric Field Effect in Atomically Thin Carbon Films

3. Experimental observation of the quantum Hall effect and Berry's phase in graphene

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Single-layer MoS2 transistors

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1. Elucidating the Degradation Mechanisms in Silicon Telluride through Multimodal Characterization;The Journal of Physical Chemistry C;2023-07-05

2. Si2Te3 Photodetectors for Optoelectronic Integration at Telecommunication Wavelengths;IEEE Journal of Selected Topics in Quantum Electronics;2022-05

3. Raman study of silicon telluride nanoplates and their degradation;Nanotechnology;2022-04-07

4. Emerging two-dimensional tellurides;Materials Today;2021-12

5. Tellurium vacancy in two-dimensional Si2Te3 for resistive random-access memory;Journal of Solid State Chemistry;2021-11

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