Investigation of broadband p-type quantum-well infrared photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122782
Reference12 articles.
1. The growth and characterization of two new P-type compressively strained layer InGaAs/AlGaAs/GaAs quantum well infrared photodetectors for mid- and long-wavelength infrared detection
2. A high strain two-stack two-color quantum well infrared photodetector
3. A voltage‐tunable multicolor triple‐coupled InGaAs/GaAs/AlGaAs quantum‐well infrared photodetector for 8–12 μm detection
4. Voltage tunable three‐color quantum well infrared photodetector
5. Recent results on quantum-well intersubband infrared detectors
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1. III-V Compound Semiconductor Optoelectronic Devices;Wiley Encyclopedia of Electrical and Electronics Engineering;2014-12-15
2. III-V compound SC for optoelectronic devices;Materials Today;2009-04
3. Infrared absorption of an In0.2Ga0.8As/GaAs quantum-well infrared photodetector employing a p–n–p camel diode structure;Applied Physics Letters;2001-07-23
4. Compound Heterostructure Semiconductor Lasers and Photodetectors;Low Temperature Electronics;2001
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