Effect of outermost layers on resonant cavity enhanced devices-Reference-Cited by-同舟云学术

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Effect of outermost layers on resonant cavity enhanced devices

Published:2004-09 Issue:5 Volume:96 Page:2423-2427
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chung Il-Sug,Lee Yong Tak,Kim Jae-Eun,Park Hae Yong

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1775302

Reference16 articles.

1. S. L. Chuang, Physics of Optoelectronics Devices (Wiley, New York, 1995), p. 249.

2. Resonant cavity enhanced photonic devices

3. RCE photodetectors based on VCSEL structures

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3. Mathematical analysis of the lasing eigenvalue problem for the optical modes in a layered dielectric cavity with a quantum well and distributed Bragg reflectors;Optical and Quantum Electronics;2007-08

4. Thresholds of Lasing as Solutions of Characteristic Equation for a VCSEL-type Layered Structure;2007 9th International Conference on Transparent Optical Networks;2007-07

5. A method to tune the cavity-mode wavelength of resonant cavity-enhanced photodetectors for bidirectional optical interconnects;IEEE Photonics Technology Letters;2006-01

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