InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2347115
Reference18 articles.
1. Introduction
2. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
3. High‐Efficiency Zn‐Diffused GaAs Electroluminescent Diodes
4. The Effect of Dislocations in Ga1 − x Al x As : Si Light‐Emitting Diodes
5. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
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