Growth of ferromagnetic semiconductor Ge1−xMnxTe films on BaF2 (111) by ionized cluster beam deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1865341
Reference34 articles.
1. Magnetoelectronics
2. Spintronics: A Spin-Based Electronics Vision for the Future
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4. Properties of ferromagnetic III–V semiconductors
5. Making Nonmagnetic Semiconductors Ferromagnetic
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1. Influence of Mn on crystal structure and thermoelectric properties of GeTe compounds;Electronic Materials Letters;2014-07
2. Influence of external factors on the self-organization of lead and tin telluride nanostructures on the BaF2(111) surface under conditions close to the thermodynamic equilibrium;Physics of the Solid State;2013-01
3. Spin-glasslike behavior in rhombohedral (Ge,Mn)Te–(Sn,Mn)Te mixed crystal;Journal of Applied Physics;2009-05-15
4. High spin polarization in ternary Ge–Mn–Te compounds based on rocksalt semiconducting GeTe;Journal of Physics: Condensed Matter;2008-03-13
5. IV-VI diluted magnetic semiconductor Ge1−xMnxTe epilayer grown by molecular beam epitaxy;Journal of Applied Physics;2008-03
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