Extrinsic dopants in quasi-one-dimensional photovoltaic semiconductor Sb2S3: A first-principles study
Author:
Affiliation:
1. Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China
2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Shanxi 030006, China
Funder
National Key Research and Development Program of China
Shanghai Academic/Technology Research Leader
Fok Ying Tung Education Foundation
Fundamental Research Funds for the Central Universities
Foundation for Innovative Research Groups of the National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5140751
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3. Stable 6%-efficient Sb2Se3 solar cells with a ZnO buffer layer
4. 6.5% Certified Efficiency Sb2Se3 Solar Cells Using PbS Colloidal Quantum Dot Film as Hole-Transporting Layer
5. Sb2Se3-Sensitized Inorganic-Organic Heterojunction Solar Cells Fabricated Using a Single-Source Precursor
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