Oxidation kinetics of ion-amorphized (0001) 6H–SiC: Competition between oxidation and recrystallization processes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1887820
Reference10 articles.
1. Thermal oxidation of 6H-silicon carbide at enhanced growth rates
2. Characterization of an enhanced thermal oxide layer on 6H–SiC using ion irradiation
3. A study about the wet oxidation of crystalline and ion damaged 6H-SiC
4. Effects of ion irradiation in the thermal oxidation of SiC
5. Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiC
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4. Characterization of LOCOS Field Oxide on 4H-SiC Formed by Ar Preamorphization Ion Implantation;IEEE Electron Device Letters;2017-06
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