Effect of an active layer thickness on lateral and longitudinal modes of a gain guiding laser with a tapered stripe structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94310
Reference6 articles.
1. Far-field radiation patterns of multiple quantum well lasers grown by MO-CVD
2. Visible cw single quantum well (AlGa)As diode lasers
3. Single-mode stabilization by traps in semiconductor lasers
4. Theory of the linewidth of semiconductor lasers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fast‐Fourier‐transform based beam‐propagation model for stripe‐geometry semiconductor lasers: Inclusion of axial effects;Journal of Applied Physics;1984-12
2. Dependence of astigmatism, far‐field pattern, and spectral envelope width on active layer thickness of gain guided lasers with narrow stripe geometry;Applied Physics Letters;1984-06-15
3. Intrinsic manifestation of regular pulsations in time-averaged spectra of semiconductor lasers;Electronics Letters;1984
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