Author:
Lie D. Y. C.,Im S.,Nicolet M.‐A.,Theodore N. D.
Subject
General Physics and Astronomy
Cited by
7 articles.
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1. Chapter 4 SiGe/Si processing;Processing and Properties of Compound Semiconductors;2001
2. Si/SiGe heterostructures for Si-based nanoelectronics;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
3. Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
4. Defects formed during 1 MeV Si ion-irradiation of GeSi/Si strained-layer heterostructures at elevated temperatures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
5. Doping and processing epitaxial GexSi1−x films on Si(100) by ion implantation for Si-based heterojunction devices applications;Journal of Electronic Materials;1998-05