Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy

Published:2021-12-27 Issue:26 Volume:119 Page:262105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vermeersch Rémy¹²^ORCID,Robin Eric³^ORCID,Cros Ana⁴^ORCID,Jacopin Gwénolé¹^ORCID,Daudin Bruno²^ORCID,Pernot Julien¹^ORCID

Affiliation:

1. University Grenoble Alpes, Grenoble INP, Institut Néel, CNRS, 38000 Grenoble, France

2. University Grenoble Alpes, CEA, IRIG-PHELIQS, NPSC, 17 rue des martyrs, 38000 Grenoble, France

3. University Grenoble Alpes, CEA, IRIG-MEM, LEMMA, 17 rue des martyrs, 38000 Grenoble, France

4. Materials Science Institute (ICMUV), University of Valencia, ES-46071 Valencia, Spain

Funder

Generalitat Valenciana

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0074454

Reference54 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. United Nations, The Minamata convention on Mercury (2017).

3. Doping of III-nitride materials

4. Transport properties of highly conductive n-type Al-rich AlxGa1−xN(x⩾0.7)

5. Acceptor Binding Energies in GaN and AIN

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defects and doping in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys;Journal of Materials Research;2024-08-12

2. Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires;Nanotechnology;2023-09-01

3. Comprehensive Electro-Optical Investigation of a Ga-Doped AlN Nanowire LED for Applications in the UV-C Range;ACS Applied Nano Materials;2023-07-31

4. Optical properties of Ga-doped AlN nanowires;Applied Physics Letters;2023-02-27

5. DX center formation in highly Si doped AlN nanowires revealed by trap assisted space-charge limited current;Applied Physics Letters;2022-04-18

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