High-detectivity infrared photodetector based on InAs submonolayer quantum dots grown on GaAs(001) with a 2 × 4 surface reconstruction
Author:
Affiliation:
1. Institute of Physics, University of Sao Paulo, Rua do Matao 1371, 05508-090 Sao Paulo, SP, Brazil
2. International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga, 4715-330 Braga, Portugal
Funder
Conselho Nacional de Desenvolvimento Científico e Tecnológico
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5125238
Reference26 articles.
1. Quantum-dot infrared photodetectors: Status and outlook
2. Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures
3. Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001)
4. Quantum dots-in-a-well infrared photodetectors
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