Structural properties of hot wire a-Si:H films deposited at rates in excess of 100 Å/s
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1407317
Reference44 articles.
1. Preparation of a-Si:H and a-SiGe:H I-Layers for Nip Solar Cells at High Deposition Rates Using a Very High Frequency Technique
2. H Out-Diffusion and Device Performance in n-i-p Solar Cells Utilizing High Temperature Hot Wire a-Si:H i-Layers
3. Low Hydrogen Content, High Quality Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD
4. Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD at Deposition Rates up to 1 µm/minute
5. Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 Å/s
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