Positron annihilation study of vacancy-like defects related to oxygen precipitates in Czochralski-type Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1401782
Reference21 articles.
1. Oxygen precipitation in silicon
2. Erratum: ‘‘A theoretical study on the critical radius of precipitates and its application to silicon oxide in silicon’’ [J. Appl. Phys. 62, 3960 (1987)]
3. Erratum: ‘‘A theoretical study on the critical radius of precipitates and its application to silicon oxide in silicon’’ [J. Appl. Phys. 62, 3960 (1987)]
4. Precipitation of oxygen in silicon: Some phenomena and a nucleation model
5. The effect of thermal history during crystal growth on oxygen precipitation in Czochralski-grown silicon
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