Crossover of electron transmission mechanism and spin filtering effect at Fe∕GaAs(001) interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2829904
Reference12 articles.
1. Highly Spin-Polarized Room-Temperature Tunnel Injector for Semiconductor Spintronics using MgO(100)
2. Challenges for semiconductor spintronics
3. A silicon-based nuclear spin quantum computer
4. Ballistic spin filtering across ferromagnet/semiconductor interfaces at room temperature
5. Spin-selective transport throughFe/AlOx/GaAs(100)interfaces under optical spin orientation
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1. Sputter Grown Fe and Fe/Cr Multilayers With Fourfold Magnetic Anisotropy on GaAs;IEEE Transactions on Magnetics;2018-01
2. The source of negative capacitance and anomalous peak in the forward bias capacitance-voltage in Cr/p-si Schottky barrier diodes (SBDs);Materials Science in Semiconductor Processing;2015-11
3. Improvement in electrical performance of half-metallic Fe3O4/GaAs structures using pyrolyzed polymer film as buffer layer;Philosophical Magazine;2014-07-04
4. The origin of negative capacitance in Au/n-GaAs Schottky barrier diodes (SBDs) prepared by photolithography technique in the wide frequency range;Current Applied Physics;2013-08
5. Q-Band Ferromagnetic Resonance Study of Fe Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering;IEEE Transactions on Magnetics;2011-12
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