Mixing of Al in Si by Ne+ions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335806
Reference24 articles.
1. Ion beam mixing: Basic experiments
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4. Al‐Si contacts formed by ion irradiation and post‐annealing
5. Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Primary radiation damage: A review of current understanding and models;Journal of Nuclear Materials;2018-12
2. First-principles simulation of collision cascades in Si to test pair-potentials for Si-Si interaction at 10 eV–5 keV;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-06
3. Relocation of Si atoms in kilo-electron-volt and mega-electron-volt Si-ion irradiation of crystalline Si;Physical Review B;1990-05-15
4. Direct and Recoil Implantation, and Collisional Ion-Beam Mixing: Recent Low-Temperature Experiments;Materials Modification by High-fluence Ion Beams;1989
5. Mechanisms in the ion beam mixing of Al in Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-07
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