Influence of Ni silicide phases on effective work function modulation with Al-pileup in the Ni fully silicided gate/HfSiON system
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3203998
Reference15 articles.
1. Investigation of Polycrystalline Nickel Silicide Films as a Gate Material
2. Threshold voltage control in NiSi-gated MOSFETs through SIIS
3. Effective Work Function Control With Aluminum Postdoping in the Ni Silicide/HfSiON Systems
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