Role of oxygen migration in the kinetics of the phase separation of nonstoichiometric silicon oxide films during high-temperature annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2790814
Reference27 articles.
1. Silicon Photonics, edited by L. Pavesi and D. J. Lockwood (Springer, Berlin, 2004), Vol. 94, p. 89.
2. Simulation of a quantum-dot flash memory
3. Evidence of light-emitting amorphous silicon clusters confined in a silicon oxide matrix
4. Optical properties of Si clusters and Si nanocrystallites in high-temperature annealed SiOx films
5. Investigation of postoxidation thermal treatments of Si/SiO[sub 2] interface in relationship to the kinetics of amorphous Si suboxide decomposition
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