Nondestructive measurement of thickness and carrier concentration of GaAs epitaxial layer using infrared spectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366841
Reference5 articles.
1. Non-Destructive Measurement of Surface Concentrations and Junction Depths of Diffused Semiconductor Layers
2. Infrared spectroscopic ellipsometry using a Fourier transform infrared spectrometer: Some applications in thin‐film characterization
3. Heavily doped GaAs:Se. I. Photoluminescence determination of the electron effective mass
4. Phase‐modulated ellipsometer using a Fourier transform infrared spectrometer for real time applications
5. An Automatic Method for Finding the Greatest or Least Value of a Function
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2. Thickness measurement of silicon thin film coated on metal mold by analyzing infrared thermal image;International Communications in Heat and Mass Transfer;2009-05
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4. Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs;Applied Physics Letters;2001-02-12
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