High quantum efficiency for Pt2Si Schottky‐barrier diodes in the vacuum ultraviolet-Reference-Cited by-同舟云学术

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High quantum efficiency for Pt2Si Schottky‐barrier diodes in the vacuum ultraviolet

Published:1994-06 Issue:11 Volume:75 Page:7588-7590
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hajsaid M.,Charlson E. J.,Charlson E. M.,Zhao G.,Meese J. M.,Stacy T.,Popovici G.,Prelas M. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.356591

Reference9 articles.

1. 160 × 244 Element PtSi Schottky-barrier IR-CCD image sensor

2. Pt-Ir silicide Schottky-barrier IR detectors

3. IrSi Schottky-barrier infrared detectors with 10- mu m cutoff wavelength

4. Ultraviolet And Extreme Ultraviolet Response Of Charge-Coupled-Device Detectors

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1. Silicon Devices and Circuits;Low Temperature Electronics;2001

2. Photoresponse study of diamond thin film/C60-doped poly(3-dodecylthiophene) heterostructure;Journal of Physics D: Applied Physics;1999-01-01

3. Potential of Si1−xGex alloys for Auger generation in highly efficient solar cells;Applied Physics A Materials Science & Processing;1995-11

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