Phosphorus redistribution in a WSi2/polycrystalline‐silicon gate structure during furnace annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340065
Reference19 articles.
1. Dopant redistribution in silicides: Materials and process issues
2. 1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspective
3. One‐Micron Polycide (WSi2 on Poly‐Si) MOSFET Technology
4. Work function measurement of tungsten polycide gate structures
5. Properties of tungsten silicide film on polycrystalline silicon
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1. Long-Range Lateral Dopant Diffusion in Tungsten Silicide Layers;IEEE Transactions on Semiconductor Manufacturing;2009-02
2. Effect of Sb+ implantation on copper silicides formation and morphology after annealing of Cu/Si structures;Materials Science in Semiconductor Processing;2004-01
3. Microstructural study of annealed Cr/Si system using cross-sectional TEM combined with nano-analysis;Materials Science and Engineering: B;2003-09
4. Effect of implanted phosphorus on silicide formation in the Cr/Si(111) system;Thin Solid Films;2001-04
5. Interfacial structure and dopant redistribution of a tungsten polycide/N+silicon substrate;Journal of Applied Physics;1993-03
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