A closed-form capacitance model for tunnel FETs with explicit surface potential solutions
Author:
Affiliation:
1. Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China
Funder
973 Projects
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4894624
Reference34 articles.
1. Tunnel field-effect transistors as energy-efficient electronic switches
2. Scaling Length Theory of Double-Gate Interband Tunnel Field-Effect Transistors
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