Effects of interdiffusion on the polarization dependent refractive index of a strained InGaAs/GaAs quantum well
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109116
Reference12 articles.
1. Single and double quantum well lasers with a monolithically integrated passive section
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3. Wide operating wavelength range and low threshold current In/sub 0.24/Ga/sub 0.76/As/GaAs vertical-cavity surface-emitting lasers
4. Thermally induced In/Ga interdiffusion in InxGa1−xAs/GaAs strained single quantum well grown by LPMOVPE
5. Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1−xAs, and In1−xGaxAsyP1−y
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1. Study of waveguide absorption in InGaAs ”quantum well-dots” heterostructures;Nano-Structures & Nano-Objects;2021-02
2. Quantum well intermixing: from visible to far-IR wavelength applications;SPIE Proceedings;1999-11-12
3. Integration of photonics devices by using quantum well intermixing;SPIE Proceedings;1999-04-28
4. AlGaAs-GaAs quantum-well electrooptic phase modulator with disorder delineated optical confinement;IEEE Journal of Quantum Electronics;1998
5. Disorder-Delineated AlGaAs/GaAs Quantum-Well Phase Modulator;MRS Proceedings;1997
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