Signature of p-type semiconductor features in paper-based back gate metal-organic framework thin-film transistors
Author:
Affiliation:
1. Institute of Fundamental and Frontier Sciences, University of Electron and Science Technology of China, Chengdu 610054, China
2. School of Materials and Energy, University of Electron and Science Technology of China, Chengdu 610054, China
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
111 Project
UESTC Shared Research Facilities of Electromagnetic Wave and Matter Interaction
China Postdoctoral Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0010929
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4. MoS2-enabled dual-mode optoelectronic biosensor using a water soluble variant of µ-opioid receptor for opioid peptide detection
5. MoS2 dual-gate transistors with electrostatically doped contacts
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