Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide-Reference-Cited by-同舟云学术

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Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

Published:2015-09-07 Issue:10 Volume:107 Page:103107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Arai Miho¹,Moriya Rai¹^ORCID,Yabuki Naoto¹^ORCID,Masubuchi Satoru¹,Ueno Keiji²^ORCID,Machida Tomoki¹³

Affiliation:

1. Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan

2. Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan

3. Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science, and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4930311

Reference30 articles.

1. The rise of graphene

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Van der Waals heterostructures

4. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

5. Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films

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