Per‐carrier nonlinear optical response of [111]‐oriented piezoelectric InGaAs/GaAs multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360846
Reference23 articles.
1. Nonlinear optical response of [111] growth axis strained‐layer superlattices
2. Excitonic optical nonlinearity induced by internal field screening in (211) oriented strained‐layer superlattices
3. Magnitude, origin, and evolution of piezoelectric optical nonlinearities in strained [111]B InGaAs/GaAs quantum wells
4. Nonlinear optical response, screening, and distribution of strain in piezoelectric multiple quantum wells
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits;MRS Communications;2012-06
2. Ultrafast differential transmission spectroscopy of excitonic transitions in InGaN/GaN multiple quantum wells;Journal of Applied Physics;2003-04-15
3. Excitonic field screening and bleaching in InGaN/GaN multiple quantum wells;Solid State Communications;2003-03
4. Femtosecond pump and probe spectroscopy of optical nonlinearities in an InGaN/GaN heterostructure;MRS Proceedings;2002
5. Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.;MRS Internet Journal of Nitride Semiconductor Research;1999
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