Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125532
Reference28 articles.
1. Gallium nitride based materials and their application for light emitting devices
2. Spatial distribution of the luminescence in GaN thin films
3. Mechanism of Yellow Luminescence in GaN
4. Photoluminescence of ion‐implanted GaN
5. Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
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