Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices-Reference-Cited by-同舟云学术

Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices

Published:2020-07-13 Issue:2 Volume:117 Page:023502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Yun-Hsuan¹,Chen Wen-Chung²,Chen Po-Hsun³^ORCID,Lin Chih-Yang¹,Chang Kai-Chun¹,Chang Yen-Cheng¹,Yeh Chien-Hung⁴,Lin Chein-Yu⁴,Jin Fu-Yuan¹,Chen Kuan-Hsu¹,Kuo Ting-Tzu⁴,Hung Wei-Chieh¹,Lee Ya-Huan¹,Lin Jia-Hong¹,Chang Ting-Chang⁵^ORCID

Affiliation:

1. Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

2. Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

3. Department of Applied Science, Chinese Naval Academy, Kaohsiung 81345, Taiwan and Center for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung 80424, Taiwan

4. Department of Photonics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan

5. Department of Physics, The Center of Crystal Research, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0012679

Reference30 articles.

1. Ultrahigh density vertical magnetoresistive random access memory (invited)