Intrinsic and extrinsic 1/f noise sources in proton‐irradiatedn‐GaAs epitaxial layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355288
Reference31 articles.
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3. Electrical transport and 1/fnoise properties of LaFe1−xNixO3(x= 0.3, 0.4 and 0.5) thin films;Journal of Physics D: Applied Physics;2008-08-19
4. 1/f NOISE DUE TO THE RETURN STATISTICS OF MOBILE POINT DEFECTS IN EXTRINSIC SEMICONDUCTOR MATERIALS;Fluctuation and Noise Letters;2007-03
5. Measurement of 1/f noise and its application in materials science;Current Opinion in Solid State and Materials Science;2002-02
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