A-centers in silicon studied with hybrid density functional theory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4817012
Reference35 articles.
1. Vacancy-Assisted Diffusion in Silicon: A Three-Temperature-Regime Model
2. Germanium diffusion mechanisms in silicon from first principles
3. Defect interactions in Sn1−xGex random alloys
4. Interaction of A-centers with isovalent impurities in silicon
5. Effect of tin on point defects and oxygen precipitation in Czochralski silicon: Experimental and theoretical studies
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