Reliable strain determination method for InGaAsN/GaAs quantum wells using a simple photoluminescence measurement
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1618371
Reference14 articles.
1. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m
2. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m
3. Room temperature low-threshold CW operation of 1.23 [micro sign]m GaAsSb VCSELs on GaAs substrates
4. Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carrier Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells;IEEE Photonics Journal;2012-12
2. Spectroscopic characterization of 1.3μm GaInNAs quantum-well structures grown by metal-organic vapor phase epitaxy;Applied Physics Letters;2005-02-28
3. Thermal excitation effects of photoluminescence of annealed GaInNAs∕GaAs quantum-well laser structures grown by plasma-assisted molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
4. Optical characteristics of 1.55μm GaInNAs multiple quantum wells;Applied Physics Letters;2004-11
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