Tuning metal-insulator transitions in epitaxial V2O3 thin films
Author:
Affiliation:
1. Science Institute, University of Iceland, Dunhaga 3, 107 Reykjavik, Iceland
2. Technovation Centre, AGC Glass Europe, Rue Louis Blériot 12, BE-6041 Gosselies, Belgium
Funder
Icelandic Centre for Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5023180
Reference25 articles.
1. Nanotextured phase coexistence in the correlated insulator V2O3
2. Transport properties and c/a ratio of V2O3 thin films grown on C- and R-plane sapphire substrates by pulsed laser deposition
3. Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide
4. Deviation from bulk in the pressure-temperature phase diagram of V2O3 thin films
5. Influence of strain on the electronic properties of epitaxial V2O3 thin films
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