Size and emission wavelength control of InAs∕InP quantum wires
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1996307
Reference15 articles.
1. Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures
2. Emission wavelength engineering of InAs/InP(001) quantum wires
3. Epitaxial growth of 1.55μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications
4. InAs/InP(001) quantum wire formation due to anisotropic stress relaxation: in situ stress measurements
5. Stress evolution aspects during InAs/InP (001) quantum wires self-assembling
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1. InAs/InP quantum-dash lasers;Nanoscale Semiconductor Lasers;2019
2. Emission wavelength control in InAs(Sb) quantum dashes-in-a-well structures;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03
3. Pressure-induced interband optical transitions in an InAs0.8P0.2/InP quantum wire;Phase Transitions;2015-06-22
4. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices;Progress in Quantum Electronics;2014-11
5. Tuning of the intersubband absorption in a shallow InAs/InP quantum wire by a transverse electric field;Superlattices and Microstructures;2014-03
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