Reliably straining suspended van der Waals heterostructures

Author:

Nazzari Daniele1ORCID,Genser Jakob1,Sistani Masiar1ORCID,Bartmann Maximilian G.1ORCID,Cartoixà Xavier2,Rurali Riccardo3ORCID,Weber Walter M.1ORCID,Lugstein Alois1ORCID

Affiliation:

1. Institute of Solid State Electronics, Technische Universität Wien 1 , Gußhausstraße 25-25a, 1040 Wien, Austria

2. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona 2 , 08193 Bellaterra, Barcelona, Spain

3. Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB 3 , 08193 Bellaterra, Spain

Abstract

2D materials provide a rapidly expanding platform for the observation of novel physical phenomena and for the realization of cutting-edge optoelectronic devices. In addition to their peculiar individual characteristics, 2D materials can be stacked into complex van der Waals heterostructures, greatly expanding their potential. Moreover, thanks to their excellent stretchability, strain can be used as a powerful control knob to tune or boost many of their properties. Here, we present a novel method to reliably and repeatedly apply a high uniaxial tensile strain to suspended van der Waals heterostructures. The reported device is engineered starting from a silicon-on-insulator substrate, allowing for the realization of suspended silicon beams that can amplify the applied strain. The strain module functionality is demonstrated using single- and double-layer graphene layers stacked with a multilayered hexagonal boron nitride flake. The heterostructures can be uniaxially strained, respectively, up to ∼1.2% and ∼1.8%.

Funder

Austrian Science Fund

Ministerio de Ciencia e Innovación

Fundación Carmen y Severo Ochoa

Generalitat de Catalunya

Ministerio de Ciencia, Innovación y Universidades

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

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