Oxygen migration during resistance switching and failure of hafnium oxide memristors-Reference-Cited by-同舟云学术

Oxygen migration during resistance switching and failure of hafnium oxide memristors

Published:2017-03-06 Issue:10 Volume:110 Page:103503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kumar Suhas¹^ORCID,Wang Ziwen²,Huang Xiaopeng¹,Kumari Niru¹,Davila Noraica¹,Strachan John Paul¹,Vine David³,Kilcoyne A. L. David³,Nishi Yoshio²^ORCID,Williams R. Stanley¹

Affiliation:

1. Hewlett Packard Labs, 1501 Page Mill Rd., Palo Alto, California 94304, USA

2. Stanford University, Stanford, California 94305, USA

3. Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4974535

Reference27 articles.

1. Memristor and selector devices fabricated from HfO2−xNx

2. Progress in the Characterizations and Understanding of Conducting Filaments in Resistive Switching Devices

3. Very Low-Programming-Current RRAM With Self-Rectifying Characteristics

4. Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

5. Technological Exploration of RRAM Crossbar Array for Matrix-Vector Multiplication

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