Band gap engineering in amorphous AlxGa1−xN: Experiment andab initiocalculations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1289496
Reference16 articles.
1. III–nitrides: Growth, characterization, and properties
2. GaN: Processing, defects, and devices
3. Edge emission of AlxGa1−xN
4. Time-resolved photoluminescence studies of AlxGa1−xN alloys
5. Visible cathodoluminescence of Er-doped amorphous AlN thin films
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