Four-probe sensing of temperature during Joule heating of silicon-Reference-Cited by-同舟云学术

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Four-probe sensing of temperature during Joule heating of silicon

Published:2021-01-01 Issue:1 Volume:92 Page:014903
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Pedersen Asger Kjærgård¹^ORCID,Madhi Daena²,Mirosnikov Daniil³,Jepsen Peter Uhd²^ORCID,Petersen Dirch Hjorth¹^ORCID

Affiliation:

1. DTU Energy--Department of Energy Conversion and Storage, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark

2. DTU Fotonik--Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark

3. Topsil GlobalWafers A/S, DK-3600 Frederikssund, Denmark

Funder

Innovationsfonden

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0033465

Reference21 articles.

1. Local synthesis of silicon nanowires and carbon nanotubes on microbridges

2. Epitaxial Integration of Nanowires in Microsystems by Local Micrometer-Scale Vapor-Phase Epitaxy

3. Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient

4. Thermal Conductivity, Electrical Resistivity, and Seebeck Coefficient of Silicon from 100 to 1300°K

5. High Temperature Electric Conductivity of Pure Silicon

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