Sweep‐out times of electrons and holes in an InGaAs/GaAs multiple quantum well modulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112173
Reference11 articles.
1. All-optical photonic switches using integrated inverted asymmetric Fabry-Perot modulators and heterojunction phototransistors
2. Evolution of the SEED technology: bistable logic gates to optoelectronic smart pixels
3. Optical detection of resonant tunnelling of electrons in quantum wells
4. Fast escape of photocreated carriers out of shallow quantum wells
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1. Impact of Strain Accumulation on InGaAs/GaAsP Multiple-Quantum-Well Solar Cells: Direct Correlation betweenIn situStrain Measurement and Cell Performances;Japanese Journal of Applied Physics;2012-10-22
2. Effects of Background Zn Doping on the Performance of InGaAs/GaAsP Multiple Quantum Well Solar Cells Grown by a Planetary Metal Organic Vapor Phase Epitaxy Reactor;Japanese Journal of Applied Physics;2012-10-22
3. Impact of Strain Accumulation on InGaAs/GaAsP Multiple-Quantum-Well Solar Cells: Direct Correlation betweenIn situStrain Measurement and Cell Performances;Japanese Journal of Applied Physics;2012-10-01
4. Effects of Background Zn Doping on the Performance of InGaAs/GaAsP Multiple Quantum Well Solar Cells Grown by a Planetary Metal Organic Vapor Phase Epitaxy Reactor;Japanese Journal of Applied Physics;2012-10-01
5. Pre-illumination to control the active trap density in a semi-insulating MQW device;IEEE Journal of Quantum Electronics;1998
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