Real‐space‐transfer of electrons in InGaAs/InAlAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.115448
Reference15 articles.
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer;Semiconductor Physics, Quantum Electronics & Optoelectronics;2015-03-25
3. Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs;MRS Proceedings;2013
4. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts;Semiconductors;2012-04
5. Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts;Semiconductor Science and Technology;2012-02-10
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