Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications-Reference-Cited by-同舟云学术

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Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications

Published:2014-01-06 Issue:1 Volume:104 Page:013102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fu W.,El Abbassi M.,Hasler T.,Jung M.,Steinacher M.,Calame M.,Schönenberger C.,Puebla-Hellmann G.,Hellmüller S.,Ihn T.,Wallraff A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4857616

Reference26 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional atomic crystals

3. Electronic transport in two-dimensional graphene

4. Graphene transistors

5. Dual-Gate Graphene FETs With $f_{T}$ of 50 GHz

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