Raman scattering studies of Cd1−xMnxTe films grown on GaAs by pulsed laser evaporation and epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348926
Reference29 articles.
1. Diluted magnetic semiconductors
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4. Temperature independent Faraday rotation near the band gap in Cd1−xMnxTe
5. Diluted magnetic semiconductor (Cd1−xMnxTe) Schottky diodes and field‐effect transistors
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1. Effect of Mn concentration on the polar optical phonons frequencies in Cd1− xMnxTe thin films;Applied Physics Letters;2023-08-14
2. Infrared and Raman characteristics of bulk Cd 1-x Mn x Te and (MnTe) m /(CdTe) n short period superlattices;Materials Letters;2016-07
3. Growing high-quality ternary CdMnTe epilayers by molecular beam epitaxy on Si substrates and its mechanism;Journal of Alloys and Compounds;2015-10
4. Confined electronic states in CdTe/Cd0.9Mn0.1Te superlattices: A resonance Raman study;Journal of Applied Physics;1998-04-15
5. Substrate photoluminescence: An aid in the evaluation of pulsed laser evaporation and epitaxial growth of Cd1−xMnxTe epilayers on (111)GaAs;Journal of Applied Physics;1994-03-15
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