Optical and structural properties of strained InAlAs/InAsxP1−x multi-quantum wells grown by solid source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371101
Reference14 articles.
1. Operation of a molecular-beam epitaxy machine employing a valved solid phosphorus source
2. Electrical characteristics of InP grown by molecular beam epitaxy using a valved phosphorus cracking cell
3. Novel strained InP/InAsxP1−xquantum‐well modulation‐doped heterostructures
4. Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells
5. Schottky barrier heights of n-type and p-type Al/sub 0.48/In/sub 0.52/As
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1. Temperature Dependent Optical Transitions in InAs0.8P0.2/InP Quantum Well Wire;Journal of Advanced Physics;2016-03-01
2. Combined effects of magnetic and electric fields on the interband optical transitions in InAs/InP quantum wire;Physica E: Low-dimensional Systems and Nanostructures;2015-03
3. Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy;Journal of Crystal Growth;2004-01
4. Influence of compressive strain on the arsenic incorporation in MOVPE-grown InAsP/InP single quantum wells;Journal of Crystal Growth;2000-12
5. Electrical properties of InAlAs/InAsxP1-x/InP composite-channel modulation-doped structures grown by solid source molecular beam epitaxy;Journal of Electronic Materials;2000-02
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