Surface modification of an amorphous Si thin film crystallized by a linearly polarized Nd:YAG pulse laser beam
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2751085
Reference44 articles.
1. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
2. High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film
3. New excimer‐laser‐crystallization method for producing large‐grained and grain boundary‐location‐controlled Si films for thin film transistors
4. Two-Dimensionally Position-Controlled Excimer-Laser-Crystallization of Silicon Thin Films on Glassy Substrate
5. Control of Nucleation and Solidification Direction of Polycrystalline Silicon by Excimer Laser Irradiation
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