Influence of a magnetic field on 1/f noise in ambipolar semiconductors: Evidence of its surface origin-Reference-Cited by-同舟云学术

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Influence of a magnetic field on 1/f noise in ambipolar semiconductors: Evidence of its surface origin

Published:1979 Issue:8 Volume:50 Page:5348
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Dilmi T.,Chovet A.,Viktorovitch P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference14 articles.

1. A. L. McWorther, inSemiconductor Surfaces Physics, edited by R. H. Kingston (University of Pennsylvania Press, Philadelphia, 1957), p. 207.

2. 1/fNoise in Germanium Devices

3. A. Van Der Ziel,Fluctuations phenomena in Semiconductors(Butterworths, London, 1959).

4. Noise in solid-state devices and lasers

5. Discussion of recent experiments on 1/ƒ noise

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1/fnoise and dye-sensitized solar cells;Semiconductor Science and Technology;2005-07-18

2. On theory of 1/f noise in semiconductors;Solid-State Electronics;2001-07

3. Noise spectroscopy of local surface levels in semiconductors;Semiconductor Science and Technology;2000-02-01

4. Flicker (1/f) noise generated by a random walk of electrons in interfaces;IEEE Transactions on Electron Devices;1987-05

5. Low-frequency current noise with a 1/f spectrum in solids;Uspekhi Fizicheskih Nauk;1985

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