Modeling of avalanche multiplication and noise in heterojunction avalanche photodiodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1719269
Reference34 articles.
1. Impact ionisation and noise in SiGe multiquantum well structures
2. Avalanche photodiodes with an impact-ionization-engineered multiplication region
3. Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region
4. Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions
5. Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates
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2. Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise;IEEE Journal of the Electron Devices Society;2013-02
3. Avalanche characteristics of thin GaAs/Al0.6Ga0.4As heterojunction avalanche photodiodes;Physica E: Low-dimensional Systems and Nanostructures;2010-03
4. Dead space effect on excess noise factor in double heterojunction avalanche photodiodes;Journal of Computational Electronics;2009-11-07
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