Time constant of defect relaxation in ion-irradiated 3C-SiC
Author:
Affiliation:
1. Lawrence Livermore National Laboratory, Livermore, California 94550, USA
2. Department of Nuclear Engineering, Texas A&M University, College Station, Texas 77843, USA
Funder
U.S. Department of Energy (Department of Energy)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4921471
Reference24 articles.
1. Handbook of SiC properties for fuel performance modeling
2. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties
3. Electron-irradiation-induced crystalline-to-amorphous transition in β-SiC single crystals
4. The temperature dependence of ion-beam-induced amorphization in β-SiC
5. Influence of irradiation spectrum and implanted ions on the amorphization of ceramics
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