Increasing robustness of EpiWafer transfer process leading to carrier lifetimes of 1.6 ms using large scale production feasible substrate wafers-Reference-Cited by-同舟云学术

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Increasing robustness of EpiWafer transfer process leading to carrier lifetimes of 1.6 ms using large scale production feasible substrate wafers

Published:2023 Issue: Volume: Page:
ISSN:0094-243X
Container-title:SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS
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Author:

Mouafi Yves Patrick Botchak,Micard Gabriel,Mürter Juliane,Birkle Nena,Sorgenfrei Ralf,Drießen Marion,Weiss Charlotte,Terheiden Barbara

Publisher

AIP Publishing

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0141132

Reference8 articles.

1. R. Brendel, “A novel process for ultrathin monocrystalline silicon solar cells on glass,” in Proc. 14th EUPVSEC, Barcelona, Spain, 1997, pp. 1354–1358.

2. Improving the Quality of Epitaxial Foils Produced Using a Porous Silicon-based Layer Transfer Process for High-Efficiency Thin-Film Crystalline Silicon Solar Cells

3. Kerfless layer-transfer of thin epitaxial silicon foils using novel multiple layer porous silicon stacks with near 100% detachment yield and large minority carrier diffusion lengths

4. 4.5 ms Effective Carrier Lifetime in Kerfless Epitaxial Silicon Wafers From the Porous Silicon Process

5. Kerfless epitaxial silicon wafers with 7 ms carrier lifetimes and a wide lift-off process window

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