Hole drift mobility in μc-Si:H
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1359436
Reference3 articles.
1. Intrinsic microcrystalline silicon (μc-Si:H) deposited by VHF-GD (very high frequency-glow discharge): a new material for photovoltaics and optoelectronics
2. New method of drift mobility evaluation in μc-Si:H, basic idea and comparison with time-of-flight
3. Extraction Current Transients: New Method of Study of Charge Transport in Microcrystalline Silicon
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