Influence of the a-SiGe:H thickness on the conduction mechanisms of n-amorphous-SiGe:H∕p-crystalline-Si heterojunction diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1866494
Reference25 articles.
1. Hydrogenated amorphous-silicon/crystalline-silicon heterojunctions: properties and applications
2. Distribution of recombination currents in the space charge region of heterostructure bipolar devices
3. Electrical characterization ofn‐amorphous/p‐crystalline silicon heterojunctions
4. A heterojunction bipolar transistor with a thin /spl alpha/-Si emitter
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1. Solution-route low-temperature fabrication of thin-film p-n junctions;Semiconductor Science and Technology;2016-09-29
2. Planarized ambipolar a-SiGe:H thin-film transistors: Influence of the sequence of fabrication process;Solid-State Electronics;2014-09
3. Effects of germane flow rate in electrical properties of a-SiGe:H films for ambipolar thin-film transistors;Thin Solid Films;2014-07
4. Development of Low-Temperature Ambipolar a-SiGe:H Thin-Film Transistors Technology;MRS Proceedings;2012
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