81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects
Author:
Funder
European Union
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3597799
Reference9 articles.
1. Device Requirements for Optical Interconnects to Silicon Chips
2. A 24-Channel, 300 Gb/s, 8.2 pJ/bit, Full-Duplex Fiber-Coupled Optical Transceiver Module Based on a Single “Holey” CMOS IC
3. High-efficiency, high-speed VCSELs with 35 Gbit/s error-free operation
4. 32 Gbit/s multimode fibre transmission using high-speed, low current density 850 nm VCSEL
5. High-Performance Zn-Diffusion 850-nm Vertical-Cavity Surface-Emitting Lasers With Strained InAlGaAs Multiple Quantum Wells
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2. Progress in Short Wavelength Energy-Efficient High-Speed Vertical-Cavity Surface-Emitting Lasers for Data Communication;Photonics;2023-04-06
3. Novel energy-efficient designs of vertical-cavity surface emitting lasers for the next generations of photonic systems;Japanese Journal of Applied Physics;2022-06-16
4. Analysis of a Vertical Cavity Surface Emitting Laser Excited by a Rectangular Pulse;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2022-02-28
5. Recent Advances in 850 nm VCSELs for High-Speed Interconnects;Photonics;2022-02-13
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